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Ph.D. position: HfO2-based OxRAM simulations and ... (No replies)

Jing Li
4 years ago
Jing Li 4 years ago

We are seeking for a talented Ph.D. candidate for HfO2-based OxRAM simulations and modeling. This is a 3-years fully funded (Cifre-ANRT funding) Ph.D. position, offered by Silvaco Inc. in collaboration with CEA-LETI. This position is to be filled by the end of the year 2020. The Ph.D. student will mainly work at CEA-LETI, Grenoble, France.

Context:

Neuromorphic computing is becoming a reality thanks to the development of new hardware components of memristive type. In particular, resistive memories RRAM have attracted a lot of attention for neuromorphic logic thanks to their high endurance, high-speed of commutation, low cost of fabrication, and multilevel programming. OxRAM is a type of RRAM in which the low and high resistance states are realized by a commutation inside a metal oxide, for example in HfO2. Beyond neuromorphic computing applications, OxRAM, which combines high-speed and non-volatility, is a promising route to achieve universal memory.

In CEA-LETI, HfO2-based OxRAM has been fabricated and tested in MAD200 (8 inch Memory Advanced Demonstrator) since 2015. OxRAM technology has been improved after several iterations. To use OxRAM as a standard component in an integrated circuit, an OxRAM model is essential to the designer. In Silvaco, an electrochemical simulation module has been developed recently to capture the resistive switching mechanism in OxRAM. By combining it with standard TCAD modules, it shows promising primitive results compared with experiments. However, the resistive switching mechanism in OxRAM remains unclear. It is worth the effort to explore different assumptions about the switching and carrier transport mechanisms.

Description of the work:

  • Evaluate the TCAD approach (by Silvaco) by comparing it with the latest experimental results on MAD200 HfO2 OxRAM devices (in LETI). Calibrate parameters in the electrochemical module from experiments. Propose possible improvements for this approach.
  • Contribute to the development by LETI of an electron transport simulator based on the Monte Carlo method and taking into account multi-phonon trap-assisted tunneling.
  • Calibrate simulation parameters from experiments and from ab initio calculations. The following parameters may be evaluated by ab initio: the trapping energies, the tunneling probability, and the electron-phonon coupling.
  • Characterize by TCAD the performance of OxRAM: switching power, SET/RESET speed, retention, and endurance.

Qualifications:

The candidate should hold a Master's degree in microelectronics, solid-state physics, or related discipline.

How to apply:

Please send CV and a motivation letter to Philippe BLAISE ([email protected]), François TRIOZON ([email protected]), Jing LI ([email protected]), Gabriel MOLAS ([email protected]). Feel free to contact us for any inquiries.

About Grenoble:

Grenoble is one of the largest research centers in France. Life in Grenoble is beyond science and technology.

https://www.giant-grenoble.org/en/

http://www.isere-tourism.com/ 

 




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Ab initio (from electronic structure) calculation of complex processes in materials