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InMRAM: Introductory Course on Magnetic Random A ... (No replies)

Damian Jones
5 months ago
Damian Jones 5 months ago

Reminder: Less than 3 weeks left to register to InMRAM

Introductory Course on Magnetic Random Access Memory
Grenoble, MINATEC/PHELMA, 2-4 July 2018

Registration now open till 3 June 2018.

This introductory course aims at helping students, researchers and engineers to better understand the physics and working principles of this new class of magnetic memories called MRAMs (Magnetic Random Access Memories) based on magnetic tunnel junctions. These MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) memory are attracting an increasing interest in microelectronics industry. In the past two years, numerous announcements from major microelectronics companies have been made about the forthcoming volume production of embedded MRAM based products. The courses will be organized during two and a half days. They will cover various aspects of MRAM technology: the basic spintronics phenomena involved in MRAM, the materials, the various categories of MRAM (pros/cons, performances, degree of maturity, R&D trends), comparison with other technologies of non-volatile memories in terms of working principle, performances, foreseen applications (Ferroelectric RAM, Phase Change RAM and Resistive RAM), the fabrication process, and the perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology. The course language will be English. This will be the fifth edition of InMRAM. The four first editions were quite successful with an average of 80 attendees from all over the world and coming from both academic laboratories and companies. At the beginning of the course, each attendee will have the choice between two introductory tutorials (2nd July morning): one on magnetism (for attendees having no or little background in magnetism) or one on microelectronics (for those having no or little background in microelectronics). On the afternoon of the 3rd day (July 4th), each attendee will have the opportunity to either visit SPINTEC or attend a training on design tools for the design of hybrid CMOS/magnetic circuits. More details can be found on the InMRAM website: http://www.InMRAM.com

Registration are now open until 3rd June 2018 at the following link also accessible via the InMRAM website: http://inmram2018.scientific-event.com/

Bernard DIENY
SPINTEC, UMR8191 (Grenoble Alpes Univ/CEA/CNRS)
CEA/Grenoble, INAC
38054 Grenoble Cedex 9, France
Tel: (33) 4 3878 3870
Mob: (33) 6 3127 2266
FAX : (33) 4 3878 2127

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Ab initio (from electronic structure) calculation of complex processes in materials