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Two years post-doc for the modeling of epitaxial ... (No replies)
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We are seeking for a talented Post-doc candidate to work on the modeling of epitaxial growth at CEA-Leti, Grenoble (France).
Position description:
This position aims to investigate theoretically the epitaxy process by CVD (Chemical Vapor Deposition) of Si and SiGe films using ab initio methods (such as DFT) and Kinetic Monte Carlo (KMC). In particular, the candidate will study the reactions occurring at the surface (adsorption, desorption, dissociation, diffusion, and etching) at the atomic scale for different chemical precursors. The candidate will apply the knowledge of the reactions to parametrize a 3D lattice KMC model to simulate the epitaxial growth. This 3D model will then be used to analyze the growth kinetics as a function of different process conditions. The candidate will benefit from interactions with experimental work performed in clean room facilities of CEA-Leti.
Expected profile:
We are looking for a strongly motivated candidate with a Ph.D. degree in Condensed Matter Physics, Quantum Chemistry, or related domain. Experiences in ab initio simulation and/or KMC is required. Strong coding skills including Python, C++ and Fortran is a plus. Knowing French is not mandatory.
Recruitment procedure:
The two years post-doc position is available immediately. The candidate should send his/her CV and motivation letter to Benoit Sklénard ([email protected]) and Jing Li ([email protected]). Recommendation letters may be required for selected candidates.