Two post-doctoral positions are open at the CEA Grenoble (France) on the modelling of Si MOS and Si/SiGe spin quantum bits (qubits). The positions will remain open until filled, and have a duration of up to 2 years.

Specific details for each position are provided below. Please clearly indicate in your application the specific position to which you are applying.

Position 1: Modelling of noise in spin qubits.

Summary:

This position aims to improve the current comprehension of noise sources in spin qubits through multiscale simulations, employing Density Functional Theory for an atomistic characterization of charge defects in qubit materials, and assessing their impact on qubit performance, particularly the noise spectrum, using numerical simulations of the qubit properties time evolution.

Under the supervision of Dr. Biel Martinez i Diaz.

More details about the position: https://drive.google.com/file/d/19xWFoyNtSg9thjUvMJWLJ8Eua_QggDy2/view?usp=sharing

To apply: Send CV with list of publications, a motivation letter with summary of accomplishments, and contact details for two recommendation letters to [email protected]

Position 2: Modelling of Si/SiGe spin qubits.

Summary:

This position focuses on the simulation of Si/SiGe spin qubits. In particular, the exploration of valley physics, the interplay between artificial SOC and spin-valley coupling, and the sensibility to disorder are topics of particular interest. The accepted candidate will combine analytical modelling with advanced numerical simulations with KP and Tight-Binding methods to strengthen our understanding on the physics of electron qubits in Si/SiGe and their future prospects.

Under the supervision of Dr. Yann-Michel Niquet.

More details about the position: https://drive.google.com/file/d/1_DiGBU6LQCvjzggQed74ZnxjkRr-hHYt/view?usp=sharing

To apply: Send CV with list of publications, a motivation letter with summary of past accomplishments, and contact details for two recommendation letters to [email protected] and [email protected].