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Postdoctoral Fellow/Visiting Researcher: The str ... (No replies)
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The computational condensed matter physics and materials science group led by Dr. Julia E. Medvedeva at the Physics Department of Missouri University of Science and Technology is seeking an outstanding candidate for a postdoctoral position to work on materials-genome-type project(s) related to amorphous wide-bandgap oxide semiconductors that are employed in many opto-electronic and photovoltaic devices and recently became competitive with silicon as an active transistor layer in large-area flexible displays. The collaborative work between Missouri S&T, Northwestern and Arizona State Universities is funded by NSF-DMREF (National Science Foundation - Designing Materials to Revolutionize and Engineer our Future) and by DOE-SETO (Department of Energy - Solar Energy Technologies Office) programs.
The successful candidate will work on ab-initio molecular dynamics simulations of multi-cation and multi-anion amorphous oxide semiconductors and density-functional calculations of the structural, electronic, optical, and mechanical properties of the disordered materials. In addition, activities may involve code development, data analysis, and database curation and management. Active collaborations with other members of the research team (both theorists and experimentalists) will be encouraged and expected.
Applicants with strong self-motivation, work ethics, and demonstrated experience in computational condensed matter physics and materials science will be given first preference. Experience in simulations, modeling, and calculations (ab-initio molecular dynamics and density functional theory) is mandatory. The successful candidate will be expected to work independently to structure and fully execute his/her tasks to meet project goals and communicate with other team members involved in the multidisciplinary project; mentor graduate/undergraduate students; author quality publications; and report results at national and international conferences. The position is open for an initial period of one year with a possibility for an extension for additional three years, contingent on successful annual reviews. Visiting Researcher position has flexible time periods.
For consideration, applicants should have the following qualifications: (i) a PhD degree in physics or materials science with a focus on computational research; (ii) demonstrated knowledge of DFT-based approaches (e.g., VASP); their applications on massively-parallel supercomputers and experience in programming (Fortran, Python); and (iii) self-motivation and ability to work in a dynamic, interdisciplinary research team. To apply, provide by email ([email protected]) a detailed resume (including education and employment/academic history, list of publications and presentations, computational skills), a 1-page motivation statement describing how your scientific and research interests and background make you a good fit for this position, and contact information for three references in support of your application. Review of the applications will begin immediately.
Recent publications on the topic can be found here:
Hydrogen doping in wide-bandgap amorphous In–Ga–O semiconductors, J. Mater. Chem. C, 2020 https://doi.org/10.1039/D0TC03370G
Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide, Proceedings of the National Academy of Sciences, 2020 https://www.pnas.org/cgi/doi/10.1073/pnas.2007897117
The Role of Cation Coordination in the Electrical and Optical Properties of Amorphous Transparent Conducting Oxides, Chemistry of Materials, 2020
https://dx.doi.org/10.1021/acs.chemmater.0c01672
Origin of High Carrier Concentration in Amorphous Wide-bandgap Oxides: Role of Disorder in Defect Formation and Electron Localization in In2O3-x, Journal of Applied Physics, 2020 https://doi.org/10.1063/1.5144219
Recent advances in understanding the structure and properties of amorphous oxide semiconductors, Advanced Electronic Materials, 2017 https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201700082