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Postdoc position in modeling group IV semiconduc ... (No replies)

specialized
5 years ago
specialized 5 years ago

A postdoc position is available in the area of modeling Si-Ge-Sn alloy based on first principle and atomistic approaches at the George Washington University. The selected candidate will work closely with a multidisciplinary team involving growth, characterization, modeling, and device to develop comprehensive understanding of Si-Ge-Sn alloy for Infrared applications. The selected candidate should have strong background in alloy theory and applying first principle methods in solving real-life problems in semiconductor alloy system. Knowledge and experience in atomistic simulation are also essential. Experience in working with experimentalists is preferred. The position is initially established for one year, with possible extension for multiple years. The selected candidate will start on June 1, 2019. Interested candidate should send CV to Dr. Tianshu Li [email protected]




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Ab initio (from electronic structure) calculation of complex processes in materials