Applications are invited for a 3-year postdoctoral position based at Queen's University Belfast, to work in the area of Electronic Structure Modelling of Tensile Strained Ge/InGaAs The position is available from January 2016.

The postdoc is part of the “Si-compatible, strain engineered staggered gap Ge(Sn)/InxGa1-xAs nanoscale Tunnel Field Effect Transistors” project funded by DELNI/InvestNI through the US - Ireland R&D Partnership Programme. The partnership involves Prof. Hudait Mantu, at ViginiaTech (US), Dr Stephen Hegarty, at the Cork Institute for Technology/Cork University (Ireland), and Dr Myrta Gruening and Prof. Jorge Kohanoff at Queen's University Belfast. The research focus will be on simulations using advanced first-principles approaches that will guide, complement and support the experimental work of characterization and demonstration of tunnel field-effect transistors (TFETs). TFETs are a promising new class of transistors based on heterojunctions of strained Germanium/InGaAs alloys.

Applicants should have a PhD in Physics, Chemistry or another relevant discipline. A good background in electronic structure and computer simulations is essential. Knowledge of electronic structure methods for excited states (e.g. density-functional or Green's function based) and previous experience of collaboration with experimentalists are highly desirable. The candidate will be based at Queen University Belfast, and will collaborate closely with the researchers at ViginiaTech (US) and Cork Institute for Technology/Cork University (Ireland). This collaboration will involve travel to the US and Ireland.

Applicants should complete an online application form, available from the following website: http://www.qub.ac.uk/sites/QUBJobVacancies/, providing an up-to-date CV, a letter of motivation, and the names and contact details of at least three academic referees.

Informal enquiries may be directed to Myrta Grüning (m.gruening@qub.ac.uk).

Closing date: 16^th November 2015, 4pm.