Aim:

Design of cheap, safe and non-corrosive precursors applicable for large area atomic layer deposition (ALD) processes.

Context:

ALD is a self-limited growth method that is characterized by alternating exposure of the growing film to chemical precursors, resulting in the sequential deposition of (sub)monolayers over the exposed sample surface. ALD enables conformal nanocoatings, excellent thickness control, on a variety of substrates ranging from nanostructures used in microelectronics to nanopowders. Since the 90s, ALD research has boomed because of the need for conformal nanocoatings in micro-electronics. Since then, ALD has become a major coating technology and a key manufacturing step in nano-electronics. However, the unique advantages of thickness control and conformality of the ALD technique have inspired investigations into applications outside of the clean room. In recent years, reactor concepts and equipment have become available for large area ALD. Large area ALD involves increased coating speeds, and hence larger precursor consumption. A major bottleneck for commercial application of large area ALD concerns the availability of cheap and safe precursors.

Traditional ALD processes (also called thermal ALD) typically use H₂O as reactant, which limits the range of usable precursors. Plasma-enhanced ALD (PE-ALD) allows for a larger variety of precursors, that are less expensive and far easier to handle. Alternatively, other highly reactive reactants such as ozone may be used for this purpose. Typical ALD precursors for deposition of Al₂O₃, SiO₂ and TiO₂ are methylaluminium (TMA), bis(diethylamino)silane (BDEAS) and tetrakis(dimethyl-amino)titanium (TDMAT). Alternative precursors that are at least one order of magnitude lower in cost compared to traditional ALD precursors are desired. Important properties of potential alternatives are thermal stability, reactivity for interaction with various substrates, reactivity of adsorbed precursors in conditions of PE-ALD and/or ozone ALD.

Program:

Quantum chemical calculations are used to obtain the relevant properties of a range of potential candidates and to identify promising candidate precursors. In collaboration with other research groups, the experimental behavior of promising candidate precursors in large area ALD will be investigated. These data can then in a next step be used to fine tune the chemical structure allowing to identify safe and cost-effective precursors for large area ALD.  

Advisors: Guy Marin and Marie-Françoise Reyniers

Funding: Cost-effective Atomic Layer Deposition Processes for Large Area Coating Applications – ERA-NET

Requirements

Applicants must possess a PhD in Chemical Engineering or related subject and a TOEFL certificate with a minimum score of 95(iBT) or equivalent. Relevant experience in the area of reactor engineering, kinetics, and/or computational chemistry is strongly recommended. Candidates must have a strong mathematical background and be willing to focus on obtaining quantitative rather than qualitative results.

Inquiries/Application

Any additional information can be obtained by contacting [email protected]. Any application should enclose a C.V., a one page justification of your interest and the e-mail addresses of at least two references.