Job announcements relevant to people interested in electronic structure calculations…
Due to the large number of posts recently, there is currently a delay of several weeks between posts being submitted and the corresponding emails being distributed to all users. Please bear with us while we try to improve this. In the meantime – and until this notice is removed – it would assist us considerably if you could submit only important and/or urgent posts and thus help to reduce the size of the mail queue. Under no circumstances should you resend posts multiple times when you find the emails are not distributed immediately.
In light of the Russian military offensive in Ukraine, we request that announcements relating to events, jobs and other activities associated with institutions supported by the Russian and Belarusian states are not posted to the Psi-k forum.
Post-doctoral position in Theoretical Physics of ... (No replies)
Back to Job listings...
The Department of Science and Methods of Engineering of the Modena and Reggio Emilia University (Italy) invites applications for one postdoctoral position (Assegno di Ricerca).
Duration: one year renewable
Theme: Multiscale modelling of HfO2 stack for memory application devices.
Research will be focused on a multiscale modeling of HfO2 stack for memory application devices. In particular the physical mechanisms governing the charge transport through HfO2 stacks will be investigated using a multiscale modelling platform which connects materials to devices to accelerate the development of novel devices for future electronic applications. The multiscale platform merges semiclassical and ab initio calculations. In particular, the ab initio calculations are performed in density functional theory (DFT). This multiscale approach describe the most relevant defect-related phenomena in charge transport. This will permit to interpret the reliability and electrical characteristics of logic and memory devices.
In this multiscale approach, the device geometry and material morphology are defined by previous DFT calculations of the energetics and electronic properties of interfaces, grain boundaries and O defects. Next, the charge transport of the device is calculated using the trap-assisted tunnelling (TAT) [6] method in combination with defect properties calculated in DFT.
Ideal candidates should have a background in Physics/Chemistry/Materials Science or related fields. Familiarity with large computational facilities, and expertise with programming are desirable. Experience of ab-initio techniques will constitute a large advantage.
The post-doc will work with Prof. Elena Degoli and Prof Luca Larcher (Unimore, Italy) and in collaboration with Dr. Nathalie Capron and Dr. Luppi (Sorbonne University, Paris France)
In case you are interested in applying, please contact ([email protected], eleonora.luppi@upmc.fr) and include : CV with a list of publications, the name and contact information of at least two referees.