Job listings

Job announcements relevant to people interested in electronic structure calculations…

Due to the large number of posts recently, there is currently a delay of several weeks between posts being submitted and the corresponding emails being distributed to all users. Please bear with us while we try to improve this. In the meantime – and until this notice is removed – it would assist us considerably if you could submit only important and/or urgent posts and thus help to reduce the size of the mail queue. Under no circumstances should you resend posts multiple times when you find the emails are not distributed immediately.

In light of the Russian military offensive in Ukraine, we request that announcements relating to events, jobs and other activities associated with institutions supported by the Russian and Belarusian states are not posted to the Psi-k forum.

PhD project on modelling defects at SiC/insulato ... (No replies)

[email protected]
5 years ago
[email protected] 5 years ago

The Department of Physics and Astronomy, UCL and Infineon Technology, Austria (IFAT) are seeking applications from enthusiastic PhD candidates interested in carrying out fundamental research using quantum mechanical methods in direct collaboration with an industrial partner. This 3.5 years PhD project in the group of Prof. Alexander Shluger at the Department of Physics and Astronomy, University College London in collaboration with IFAT will focus on  modeling the effects of defects at SiC/insulator interfaces on the performance of power field-effect-transistors (FETs) for future green technologies.

The power consumption and reliability of FETs based on SiC strongly depend on the defects present in SiC, in the insulator and at the metal-semiconductor interface. Defects in SiC are also considered as prospective candidates for quantum computation. This PhD project will use computational modelling to predict ways of improving materials and deposition techniques for SiC growth processes to minimize defect influences and improve the power consumption and performance of SiC-based devices. This will include using the existing and developing novel methods for modelling the structure and properties SiC/insulator/metal interfaces based on atomistic modelling and Density Functional Theory.

Highly motivated candidates from Physics, Chemistry or Materials Science Departments are strongly encouraged to apply for this post. Please note that, due to funding restrictions, only UK/EU citizens are eligible for this studentship. The PhD training and research will be carried out within the M3S Engineering Doctorate Centre at UCL and the London Thomas Young Centre.

The closing date for applications is 31st March, 2020. Evaluation of applications will commence immediately, and will continue until the position is filled. Applications and inquiries regarding the vacancy can be made to [email protected]   (Tel: +44 (0)20 7679 1312).




Back to Job listings...

Leave a Reply

This site uses Akismet to reduce spam. Learn how your comment data is processed.

Ab initio (from electronic structure) calculation of complex processes in materials