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PhD position: optoelectronic properties of InAs- ... (No replies)
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We are looking for a skilled and motivated candidate for a 3 years fully-funded PhD at IEMN-Lille (France), in collaboration with an industrial partner.
The project involves the atomistic modeling of optoelectronic properties of colloidal InAs-based Core-Shell quantum dots using tight-binding, empirical pseudo-potential or density functional theory methods.
The PhD offer is under the supervision of Christophe Delerue at IEMN-Lille, in collaboration with Arthur Arnaud and Gabriel Mugny at STMicroelectronics (Grenoble/Crolles).
Requirements:
The candidate will have:
- A profile of physicist or related field (university master or engineering school).
- Very good knowledge in quantum mechanics, semiconductor physics and/or computational physics.
- Past experiences (internships) on quantum mechanics or scientific code development or quantum dots synthesis/characterization will be highly appreciated.
Application process:
Application should be sent to [email protected] and [email protected] before September 9th 2022, with your CV, cover letter and, if available, your grade record of your last semester.
Potential candidates are welcome to contact us for any inquiry through the mail.
Position details:
Semiconductor nanoscrystals (quantum dots) are nanometric particles which, due to their size, have the property of absorbing and emitting light over narrow wavelength ranges (quantum confinement). These optical properties can be adjusted by playing on the type of materials used, the size of the nanoparticles as well as by modifying the ligands matrix of materials in which they are incorporated. These excellent optical properties have stimulated the development of specific technologies with applications in the field of imaging, photovoltaic conversion, lighting, or luminous displays.
Through the framework of a three-year CIFRE contract, detached at Lille within the laboratory IEMN (Lille University), the PhD candidate will work on the understanding of the intrinsic properties of indium-arsenide-based quantum dots such as optical absorption, radiative and non-radiative recombination, as well as the workfunction of quantum-dots-based films, using quantum-mechanics computational methods such as tight-binding, EPM or DFT.
He will study several types of InAs-based quantum dots, from single core to core-shell quantum dots using InAs with other materials such as CdSe, InP etc, with the goal of finding solutions to improve fluorescent properties of these quantum dots. He will have to compare his simulations with experimental data obtained at the laboratory or at STMicroelectronics to ensure the validity of the results obtained.
Thanks to this thesis work, the PhD candidate will acquire important theoretical knowledge on the physical properties of quantum dots through his work at the laboratory while being immersed in the microelectronics industry, which will allow him to see the practical outcomes of fundamental physics problems.