The electrical properties of inorganic semiconductor i.e. carrier concentration and mobility are intimately linked to point or extended defects formed during the growth of the materials. Such information is of primer importance for most electronic devices based on such materials. Among them, the limitation of current photovoltaic technology cells can be largely attributed to point defects and their detrimental effect on solar cells performances. A deeper understanding of such effects is thereby highly desirable.

The PhD subject will focus on developing a methodology in order to compute from first principles calculations the full temperature dependence of macroscopic electrical properties such as free carrier concentration starting from the calculation of point defect formation free energy and employing such data as inputs for multiscale physical modelling. The primary area of interest will be photovoltaic inorganic materials.

We are looking for highly motivated students with a Master in Physics or Chemistry preferably with a strong background in solid state physics, quantum mechanics or quantum chemistry. Candidates must have excellent computer programming skills possibly with previous experiences on atomistic simulation.

The 3 year PhD Fellowship will be funded by EDF and ANRT through a CIFRE contract. The study will take place at Institute of Research and Development on Photovoltaics Energy, Chatou, France and start as soon as possible. The PhD candidate will actively participate to research program focusing on theory and modeling within the Institut Photovoltaïque d’Ile de France (IPVF). This PhD thesis will be conducted under the supervision of Jean-François Guillemoles and Julien Vidal. Applicants should send their resume along with a motivation letter and name and address of 2 references to J. Vidal.

Contacts:

Julien Vidal, [email protected], Phone: +33 (0)130878668

Jean-François Guillemoles, [email protected], Phone : +81 (0)3-5452-5779