GLOBALFOUNDRIES is seeking for a highly skilled and motivated Micromagnetic Modeler with a strong background in MRAM device physics and Micromagnetics.

In this role, you will be an individual contributor responsible for Micromagnetic modeling of next-generation STT-MRAM devices for CMOS 28nm or below. You are also required to co-ordinate with STT-MRAM device design team, and work in closely with the experimental teams in GlobalFoundries. 

Roles And Responsibilities:

• MTJ Materials, Transport and Micromagnetics Modeling
• Understanding of the variation of magneto-crystalline anisotropy energy of Ferromagnetic alloys as a function of individual material concentration using Material Simulation tool
• Effect of non-uniform demagnetization field on switching process in the regime of nucleation-induced switching
• Generation of Switching Phase diagram using coupled solution of Transport and Micromagnetics
• Magnetic Stray field and Thermal Stability calculation using Micromagnetic simulation tool
• MTJ data analysis

Requirements

• Education: PhD in Spintronics and Micromagnetics
• In-depth understanding of STT materials and device physics
• Proficiency in using Materials and Micromagnetic simulation tools.
• Excellent analytical skills
• Ability to work in a multidisciplinary and diverse team
• Good communication and interpersonal skills

Interested candidates are advised to email to Deepanjan Datta ([email protected])  for further discussions.