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Permanent position in Spin Torque MRAM modeling ... (No replies)

deepanjan
9 years ago
deepanjan 9 years ago

GLOBALFOUNDRIES is seeking for a highly skilled and motivated Micromagnetic Modeler with a strong background in MRAM device physics and Micromagnetics.

In this role, you will be an individual contributor responsible for Micromagnetic modeling of next-generation STT-MRAM devices for CMOS 28nm or below. You are also required to co-ordinate with STT-MRAM device design team, and work in closely with the experimental teams in GlobalFoundries. 

Roles And Responsibilities:

  • MTJ Materials, Transport and Micromagnetics Modeling
  • Understanding of the variation of magneto-crystalline anisotropy energy of Ferromagnetic alloys as a function of individual material concentration using Material Simulation tool
  • Effect of non-uniform demagnetization field on switching process in the regime of nucleation-induced switching
  • Generation of Switching Phase diagram using coupled solution of Transport and Micromagnetics
  • Magnetic Stray field and Thermal Stability calculation using Micromagnetic simulation tool
  • MTJ data analysis

Requirements

  • Education: PhD in Spintronics and Micromagnetics
  • In-depth understanding of STT materials and device physics
  • Proficiency in using Materials and Micromagnetic simulation tools.
  • Excellent analytical skills
  • Ability to work in a multidisciplinary and diverse team
  • Good communication and interpersonal skills

Interested candidates are advised to email to Deepanjan Datta ([email protected])  for further discussions.




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Ab initio (from electronic structure) calculation of complex processes in materials