GLOBALFOUNDRIES is seeking for a highly skilled and motivated Micromagnetic Modeler with a strong background in MRAM device physics and Micromagnetics.

In this role, you will be an individual contributor responsible for Micromagnetic modeling of STT-MRAM devices for CMOS 28nm or below. You are also required to co-ordinate with STT-MRAM device design team, and work in closely with the experimental teams in GlobalFoundries.

Roles And Responsibilities:

• Generation of Switching Phase diagram using coupled solution of Spin transport and Micromagnetics
• Effect of non-uniform demagnetization field on switching process in the regime of nucleation-induced switching
• Calculation of Write Error Rate (WER)
• Magnetic Stray field and Thermal Stability calculation using Micromagnetic simulation tool
• MTJ data analysis

Requirements

• Education: PhD in Spintronics and Micromagnetics
• In-depth understanding of STT materials and device physics
• Proficiency in using Materials and Micromagnetic simulation tools.
• Excellent analytical skills
• Ability to work in a multidisciplinary and diverse team
• Good communication and interpersonal skills

Interested candidates are advised to email to Deepanjan Datta ([email protected]) for further discussions.