Research and Development positions in Nano materials and Device Modeling at Globalfoundries India center

GLOBALFOUNDRIES is a leading semiconductor manufacturing company with unique R&D capabilities in semiconductor technology development. GLOBALFOUNDRIES is looking to hire talents scientists and engineers, for its upcoming India center at Bangalore, in the areas of Nanomaterials and Device modeling for 14/10nm and beyond technology, RFSOI, STT-MRAM materials and device modeling.

Ab-initio Materials and Device Physics Modeling :

This work involves theory and modeling of materials and device physics phenomena including quantum effects for 20/14/10nm and beyond devices: these phenomena include semi-classical and quantum transport, bandstructure, high-k metal gate technology modeling, semiconductor and oxide materials defect modeling for reliability, resistance modeling, spacer materials, III-V materials, diffusion and related phenomena for high performance and low power nanodevice technology.

Candidates to be considered for this area are required to have a strong understanding of solid-state physics, semiconductor device physics/engineering and related areas. Candidates are also expected to have a strong background in electronic structure methods, numerical programming, hands on experience with ab-initio modeling tools including density functional theory, molecular dynamics, kinetic monte-carlo and computer programming in mixed language environment. Experience with simulation based predictive modeling for technology development elements including semiconductor process, HKMG, Device design, FEOL and BEOL is desirable.

TCAD Process and Device Modeling :

This work involves modeling of nanoscale phenomena including process, carrier transport, band-structure, semiconductor related physical models for advanced 20/14/10nm and beyond technologies, A comprehensive knowledge of modern device physics along with scaling challenges is essential for these positions, including MOSFETs, FinFETs, Nanowire and novel device architectures based on bulk and Silicon-on-Insulator structures.

Candidates for this area are expected to have a good working experience of TCAD based process and device simulations. Also, a strong understanding of carrier transport, mobility models, tunneling (direct, trap assisted and band-to-band, quantization, scattering and related quantum phenomena relevant to semiconductor nanodevices is essential. Demonstrated proficiency with TCAD process and devices simulators is a must. Programming skills with C++, C, and Tcl, familiarity with concepts related to numerical solution of PDEs to realize semiconductor-related physical models is a plus.

Qualifications :

Interested applicants for the above regular research positions should have a Ph.D/MS in Physics, Electrical Engineering, Applied Physics, Computer Science, or Theoretical Materials Science. Please send your resume to, murali.kota at globalfoundries.com